Beursstand: G20
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P-type HJT powering lightweight, radiation-resistant space systems.
- Technical Highlights Overview
The p-type HJT space solar cell combines ultra-thin silicon wafer technology with a symmetrical heterojunction structure, achieving an optimal balance of efficiency, weight and reliability.
- 26.65%/24.0% AM 1.5G/AM0 Maximum Efficiency (BOL)
- <60μm Ultra-thin silicon wafer thickness
- 19.2% AM0 Maximum Efficiency (End-of-Life)
- Battery Structure Comparison
P-type HJT cells employ a symmetrical heterojunction structure and low-temperature processing, combining high efficiency with ultra-thin, flexible characteristics; III-V multi-junction cells achieve the highest efficiency but carry extremely high costs.
- Ultra-thin and flexible, suitable for diverse spacecraft configurations
- Customised Thickness
- Bending performance
- Radiation resistance and technical validation
- Strong resistance to displacement damage
- Low carrier removal rate
- Low radiation-induced defect concentration
- Self-healing effect
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